The photonics revolution at the beginning of the XXI century has its roots in the spectacular development of semiconductor devices based on quantum well (QW) and quantum dot (QD) microstructures that became the enabling force in constructing advanced active photonics devices. In comparison with Si-based electronic integrated-circuit Complementary Metal-Oxide Semiconductor (CMOS) technology, the fabrication of photonic devices has no single-platform integration technology available that would be capable of providing global manufacturing solutions. Consequently, integrated photonic and optoelectronic circuits, which require different bandgap materials, have been traditionally fabricated using various hybrid manufacturing schemes.
07.09.18
New! MSc and PhD positions (Physics, Electrical Engineering, Biophysics) available from January 2019
27.02.18
In situ Monitored Interaction Between Electrically Charged Molecules and Functionalized Surfaces of III-V Quantum Semiconductors (English, French)
27.02.18
Digital Photo-Etching of III-V Semiconductors: Innovative Technology for Nanoscale Device Fabrication (English, French)
15.06.15
CSSTC 2015: Call for post-deadline poster presentations (Read more)
15.03.15
17th Canadian Semiconductor Science and Technology Conference in Sherbrooke, August 16-21, 2015 (Read more)