Romain Béal

Romain Béal
UV Laser Quantum Well Intermixing for Monolithically Integrated Photonic Devices

[tab title=”Project”]

Photonics is a constantly growing field that has offered attractive solutions for telecommunication, information technologies and consumer market. Optical fiber wavelength division multiplexing (WDM) technology is an example of the solution offered to fulfil the booming bandwidth requirements for new data transmission. The successful introduction of the WDM technology for the end user, however, will only be possible through the cost reduction of devices and sub-components. Such a goal can possibly be reached by following the micro-electronics industry path of monolithic integration and mass production. The objective of this project is to investigate a UV laser-based process of quantum well and quantum dot intermixing. Following preliminary studies of UV laser QW intermixing (UV Laser-QWI) carried out by Jonathan Genest on III-V GaAs- and InP-based heterostructures, the focus of this work is on assessing the feasibility of the UV Laser-QWI technology for the fabrication of selected monolithically integrated photonic devices, and to study the performance of such devices.
Figure 1
Figure 1 – UV Laser Induced QWI Process schematic
Figure 2
Figure 2 – PL Map of Quantum Well structure intermixed using 95 mJ/cm² laser fluence with different mask patterns

[tab title=”Curriculum”]

  • 2005 – 2006
    Master Degree – Nanotechnology
    INSA[1] of Toulouse, France
  • 2001 – 2006
    Physical Engineering
    University, Country

[tab title=Publications]

    • Genest J., Béal R., Aimez V. and Dubowski J. J., ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures, Applied Physics Letters, v 93, n 7, 18 Aug. 2008, p 071106-1-3





[tab title=”Contact”]

Romain Béal
Department of Electrical Engineering
University of Sherbrooke
2500 boul. Université
Sherbrooke, Québec
Office: C1-2115-6
Tel: +01.819.821.8000 ext. 62138
Fax: +01.819.821.7937


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