- T. Akane, K. Sugioka, K. Midorikawa and J.J. Dubowski, “Process for formation of cap layer for semiconductor”, US patent # 6,432,848, August 13, 2002 (pending in Japan, EU and Canada).
- A process for the formation of a cap layer for semiconductors with a low degree of contamination wherein the cap layer is easily formed on the surface of a semiconductor, and binding force thereof with the surface of the semiconductor is strong and stabilized. This approach has the potential application to develop various processing schemes for surface bio-functionalization of different organic-inorganic biological hybrid systems.