J.J. Dubowski, “Laser-induced bandgap shifting for photonic device integration”, US patent # 6,514,784, February 4, 2003 (pending in Canada).
To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra-violet (UV) laser radiation to induce alteration of a near-surface region of such microstructure. Subsequently the microstructure is annealed to induce quantum well intermixing and thereby cause a bandgap shift dependent of said UV radiation. This method could be used for developing multi-color arrays of QD templates, which have been the subject of an extensive investigation in our laboratory.

Copyright 2023 – All rights reserved.